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Application Note

Direct Analysis of Metallic Impurities in Hydrochloric Gas Using Gas Exchange Device (GED) ICP-MS

Introduction

In today’s fast-paced world, semiconductors have become indispensable. Demands for faster and smaller chips with higher integration and lower energy consumption are increasing. Potential sources of metallic contamination in semiconductor manufacturing processes are ubiquitous, thus it is critical to be able to leverage instrumentation capable of accurately measuring metal contamination at these ultra-trace levels.

This work describes the analysis of metallic impurities in hydrochloric (HCl) gas by gas exchange device (GED) coupled to the NexION® 5000 Multi-Quadrupole ICP-MS, offering a powerful analytical solution which provides unprecedented benefits for the semiconductor and electronics industry.