Analysis of SiC and GaN Wafers by LA-GED-MSAG-ICP-MS


Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies are shaping the future of the semiconductor and electronics market. Conventional testing technologies will need to evolve to meet this market need. Join us to learn how laser ablation ICP-MS, combined with GED (gas exchange device) and MSAG (metal standard aerosol generation) accessories are able to efficiently and accurately completely scan a 300 nm wafer for metal impurities.

Data is presented by Katsu Kawabata of IAS Inc, who conducted experiments using a PerkinElmer NexION 5000 - an ICP-MS instrument which permits for higher RPa and RPq to minimize the sensitivity of major matrix elements such as Si and Ga.

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